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3306B

KIA
Part Number 3306B
Manufacturer KIA
Description N-CHANNEL MOSFET
Published Mar 1, 2022
Detailed Description KIA SEMICONDUCTORS 80A 60V N-CHANNEL MOSFET 1. Features n RDS(ON)= 7mΩ typ@ VGS=10V n Lead free and Green Device Avail...
Datasheet PDF File 3306B PDF File

3306B
3306B

Overview
KIA SEMICONDUCTORS 80A 60V N-CHANNEL MOSFET 1.
Features n RDS(ON)= 7mΩ typ@ VGS=10V n Lead free and Green Device Available n Low Rds-on to Minimize Conductive Loss n High avalanche Current 2.
Application n Power Supply n DC-DC Converters 3.
Pin configuration 3306B Pin Function 1 Gate 2 Drain 3 Source 1 of 6 Rev 1.
0 Sep.
2017 KIA SEMICONDUCTORS 80A 60V N-CHANNEL MOSFET 3306B 4.
Ordering Information Part Number KND3306B KNB3306B Package TO-252 TO-263 Brand KIA KIA 5.
Absolute maximum ratings Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Continuous Drain Current TC=25 ºC TC=100 ºC ID3 Pulsed Drain Current TC=25 ºC IDP4 Avalanche Current IAS5 Avalanche Energy EAS5 Maximum Power Dissipation TC=25 ºC TC =100 ºC PD Junction & Storage Temperature Range TL,TSTG *Drain current limited by maximum junction temperature.
(TC= 25ºC , unless otherwise specified) Rating TO-252 TO-263 Units 60 V ±25 V 80* 80 60* 60 280 A 20 400 mJ 84.
5 156 W 41 80 -55~+150 ºC 6.
Thermal characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typical TO-252 TO-263 1.
48 0.
8 62.
5 Unit ºC /W 2 of 6 Rev 1.
0 Sep.
2017 KIA SEMICONDUCTORS 80A 60V N-CHANNEL MOSFET 3306B 7.
Electrical characteristics Parameter Static Characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Drain-source on resistance Diode Characteristics Diode Forward Voltage Diode Continuous Forwardcurrent Reverse recovery time Reverse recovery charge Dynamic Characteristics2 Gate Repacitance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2 Symbol (TJ=25°C,unless otherwise specified) Conditions Min Typ Max Unit V(BR)DSS VGS=0V,ID=250μA 60 - IDSS VDS=48V,VGS=0V TJ=125 ºC IGSS VGS=+25V,VDS=0V V...


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