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SF803G

Taiwan Semiconductor
Part Number SF803G
Manufacturer Taiwan Semiconductor
Description Super Fast Rectifier
Published Mar 3, 2022
Detailed Description SF801G – SF808G Taiwan Semiconductor 8A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● Hig...
Datasheet PDF File SF803G PDF File

SF803G
SF803G


Overview
SF801G – SF808G Taiwan Semiconductor 8A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● High efficiency, low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converters ● Switching mode converters and inverters ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 8 A 50 - 600 V IFSM TJ MAX Package 125 A 150 °C TO-220AB Configuration Dual dies MECHANICAL DATA ● Case: TO-220AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Mounting torque: 0.
56 N⋅m maximum ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.
82g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SF SF SF SF SF SF SF SF SYMBOL 801G 802G 803G 804G 805G 806G 807G 808G UNIT Marking code on the device SF SF SF SF SF SF SF SF 801G 802G 803G 804G 805G 806G 807G 808G Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current IF Surge peak forward current, 8.
3ms single half sine wave IFSM superimposed on rated load 8 A 125 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: I2104 SF801G – SF808G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL RӨJC TYP 3 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL SF801G SF802G SF803G Forward voltage per diode(1) SF804G SF805G IF = 4A, TJ = 25°C VF SF806G SF807G SF808G Reverse current @ rated VR per diode(2) TJ = 25°C IR TJ = 100°C SF801G SF802G SF803G Junction capacitance per diode SF804G SF805G 1MHz, VR = 4.
0V CJ SF806G SF807G SF808G Reverse recovery time IF = 0.
5A, IR = 1.
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