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DBLS103G

Taiwan Semiconductor
Part Number DBLS103G
Manufacturer Taiwan Semiconductor
Description Standard Bridge Rectifier
Published Mar 6, 2022
Detailed Description DBLS101G – DBLS107G Taiwan Semiconductor 1A, 50V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified avail...
Datasheet PDF File DBLS103G PDF File

DBLS103G
DBLS103G

Overview
DBLS101G – DBLS107G Taiwan Semiconductor 1A, 50V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified available ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● High surge current capability ● UL Recognized File # E-326854 ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 A 50 - 1000 V IFSM TJ MAX Package 30, 40 A 150 °C DBLS Configuration Quad MECHANICAL DATA ● Case: DBLS ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 0.
360g (approximately) DBLS ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage SYMBOL VRRM DBLS DBLS DBLS DBLS DBLS DBLS DBLS UNIT 101G 102G 103G 104G 105G 106G 107G DBLS DBLS DBLS DBLS DBLS DBLS DBLS 101G 102G 103G 104G 105G 106G 107G 50 100 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 560 700 V Forward current IF Peak forward surge current, 8.
3ms single half sine-wave IFSM superimposed on rated load Rating for fusing (t<8.
3ms) I2t 1 40 6.
6 A 30 A 3.
7 A2s Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: P2103 DBLS101G – DBLS107G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJL RӨJA TYP 15 40 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode(1) CONDITIONS IF = 1A, TJ = 25°C SYMBOL VF Reverse current @ rated VR per diode(2) TJ = 25°C IR TJ = 125°C Junction capacitance per diode 1MHz, VR = 4.
0V CJ ...


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