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Si2369DS

Vishay
Part Number Si2369DS
Manufacturer Vishay
Description P-Channel MOSFET
Published Apr 25, 2022
Detailed Description www.vishay.com Si2369DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: H9 1 G Top V...
Datasheet PDF File Si2369DS PDF File

Si2369DS
Si2369DS

Overview
www.
vishay.
com Si2369DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: H9 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max.
() at VGS = -10 V RDS(on) max.
() at VGS = -6 V RDS(on) max.
() at VGS = -4.
5 V Qg typ.
(nC) ID (A) a Configuration 2 S -30 0.
029 0.
034 0.
040 11.
4 -7.
6 Single FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • For mobile computing - Load switch S - Notebook adaptor switch - DC/DC converter G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2369DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current TC = 25 °C TA = 25 °C TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range VDS VGS ID IDM IS PD TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d t5s Maximum junction-to-foot (drain) Steady state Notes a.
Based on TC = 25 °C b.
Surface mounted on 1" x 1" FR4 board c.
t = 5 s d.
Maximum under steady state conditions is 166 °C/W SYMBOL RthJA RthJF TYPICAL 75 40 LIMIT -30 ± 20 -7.
6 -6.
1 -5.
4 b, c -4.
3 b, c -80 -2.
1 -1 b, c 2.
5 1.
6 1.
25 b, c 0.
8 b, c -55 to +150 MAXIMUM 100 50 UNIT V A W °C UNIT °C/W S13-1663-Rev.
A, 29-Jul-13 1 Document Number: 62865 For technical questions, contact: pmostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com Si2369DS Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CO...


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