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TSM260P02

Taiwan Semiconductor
Part Number TSM260P02
Manufacturer Taiwan Semiconductor
Description P-Channel Power MOSFET
Published May 10, 2022
Detailed Description TSM260P02 Taiwan Semiconductor P-Channel Power MOSFET -20V, -6.5A, 26mΩ FEATURES ● Fast switching ● Suitable for -1.8V...
Datasheet PDF File TSM260P02 PDF File

TSM260P02
TSM260P02

Overview
TSM260P02 Taiwan Semiconductor P-Channel Power MOSFET -20V, -6.
5A, 26mΩ FEATURES ● Fast switching ● Suitable for -1.
8V Gate Drive Applications ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Battery Pack ● Portable Devices KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS -20 V ID -6.
5 A VGS = -4.
5V 26 RDS(on) (max) VGS = -2.
5V 32 mΩ VGS = -1.
8V 40 Qg 19.
5 nC SOT-26 SOT-23 Note: 1.
MSL 1 (Moisture Sensitivity Level) for SOT-26 per J-STD-020 2.
MSL 3 (Moisture Sensitivity Level) for SOT-23 per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25°C TC = 100°C Total Power Dissipation TC = 25°C Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT TJ TJ, TSTG -20 ±10 -6.
5 -4.
1 -26 1.
56 150 - 55 to +150 UNIT V V A A W ºC °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance RӨJA 80 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances.
RӨJC is guaranteed by design while RӨCA is determined by the user’s board design.
RӨJA is shown for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000208 1 Version: D1811 TSM260P02 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static (Note 2) CONDITIONS SYMBOL MIN Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -20 Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.
3 Gate Body Leakage VGS = ±10V, VDS = 0V IGSS -- VDS = -20V, VGS = 0V -- Zero Gate Voltage Drain Current IDSS VDS = -16V, TJ = 125ºC -- VGS = -4.
5V, ID = -5A -- Drain-Source On-State Resistance VGS = -2.
5V, ID = -4A VGS = -1.
8V, ID = -3A RDS(on) -- -- Forward Transconductance Dynamic (Note 3) VDS = -10V, IS = -5A gfs -...


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