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2SK3900-ZP

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N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3900-ZP FEATURES ·Drain Current : ID= 82A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V...


Inchange Semiconductor

2SK3900-ZP

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isc N-Channel MOSFET Transistor 2SK3900-ZP FEATURES ·Drain Current : ID= 82A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 82 A IDM Drain Current-Single Pluse 246 A PD Total Dissipation @TC=25℃ 104 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.2 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID= 1mA VGS= 10V; ID= 41A VGS= 4V; ID= 41A VGS= ±20V;VDS= 0 VDS= 60V; VGS= 0 IS= 82A; VGS= 0 2SK3900-ZP MIN MAX UNIT 60 -- V 1.5 2.5 V -- 8.0 10 mΩ -- ±10 uA -- 10 uA -- 1.5 V NOTICE: ISC reserves the rights to ...




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