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2SK3987-01L

Fuji Electric
Part Number 2SK3987-01L
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Jun 15, 2022
Detailed Description 2SK3987-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switc...
Datasheet PDF File 2SK3987-01L PDF File

2SK3987-01L
2SK3987-01L

Overview
2SK3987-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 500 V VGS=-30V Continuous drain current ID 3.
6 A Pulsed drain current ID(puls] ±14.
4 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR 3.
6 A Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage EAS EAR dVDS/dt dV/dt PD Tch 227.
9 6.
0 20 5 60 2.
02 +150 mJ Note *2 mJ Note *3 kV/μs VDS <=500V kV/μs Note *4 W Tc=25°C W Ta=25°C °C temperature range Tstg -55 to +150 °C Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=1.
5A, L=186mH, VCC=50V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(o...


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