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FDP33N25

Inchange Semiconductor
Part Number FDP33N25
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jun 24, 2022
Detailed Description isc N-Channel MOSFET Transistor FDP33N25 FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(...
Datasheet PDF File FDP33N25 PDF File

FDP33N25
FDP33N25

Overview
isc N-Channel MOSFET Transistor FDP33N25 FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 94mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 33 A PD Total Dissipation @TC=25℃ 132 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERIS...


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