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FQA11N90

Part Number	FQA11N90
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jun 24, 2022
Detailed Description	isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900...
Datasheet	FQA11N90 PDF File

Overview

isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.
4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
96Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11.
4 A IDM Drain Current-Single Pluse 45.
6 A PD Total Dissipation @TC=25℃ 300 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Stora...

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