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FQP3N60C

ON Semiconductor
Part Number FQP3N60C
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jun 28, 2022
Detailed Description MOSFET - N-Channel QFET) 600 V, 3.4 W, 3.0 A FQP3N60C General Description This N−Channel enhancement mode power MOSFET ...
Datasheet PDF File FQP3N60C PDF File

FQP3N60C
FQP3N60C

Overview
MOSFET - N-Channel QFET) 600 V, 3.
4 W, 3.
0 A FQP3N60C General Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 3.
0 A, 600 V, RDS(on) = 3.
4 W (Max.
) at VGS = 10 V, ID = 1.
5 A • Low Gate Charge (Typ.
10.
5 nC) • Low Crss (Typ.
5.
0 pF) • 100% Avalanche Tested • This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 600 VGSS Gate−Source Voltage ±30 ID Drain Current Continuous (TC = 25°C) 3 Continuous (TC = 100°C) 1.
8 IDM Drain Current Pulsed (Note 1) 12 EAS Single Pulse Avalanche Energy (Note 2) 150 IAR Avalanche Current (Note 1) 3 EAR Repetitive Avalanche Energy (Note 1) 7.
5 dv/dt Peak Diode Recovery dv/dt (Note 3) 4.
5 V V A A mJ A mJ V/ns PD Power (TC = 25°C) Dissipation Derate above 25°C 75 W 0.
62 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to °C +150 TL Maximum Lead Temperature for 300 °C Soldering, 1/8″ from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Repetitive rating: pulse−width limited by maximum junction temperature 2.
L = 30 mH, IAS = 3 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C 3.
ISD ≤ 3 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C THERMAL CHARACTERITICS Symbol Parameter RqJC Maximum Thermal Resistance, Junction to Case RqJA Maximum Thermal Resistance, Junction to Ambient Ratings 1.
67 Unit °C/W 62.
5 °C/W ...


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