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NVBLS1D7N10MC

ON Semiconductor
Part Number NVBLS1D7N10MC
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jun 28, 2022
Detailed Description MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 mW, 265 A NVBLS1D7N10MC Features • Low RDS(on) to Minimize Conduction...
Datasheet PDF File NVBLS1D7N10MC PDF File

NVBLS1D7N10MC
NVBLS1D7N10MC

Overview
MOSFET - Power, Single N-Channel, TOLL 100 V, 1.
8 mW, 265 A NVBLS1D7N10MC Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 265 A 187 303 W 152 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 32.
4 A 22.
9 4.
5 W 2.
3 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche...


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