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KTC2020D

Part Number	KTC2020D
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Jul 10, 2022
Detailed Description	isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Sp...
Datasheet	KTC2020D PDF File

Overview

isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.
0 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.
0 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.
0A; IB= 0.
2A VBE(on)...

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