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2SK3676-01S

Inchange Semiconductor
Part Number 2SK3676-01S
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 3, 2022
Detailed Description isc N-Channel MOSFET Transistor 2SK3676-01S FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 9...
Datasheet PDF File 2SK3676-01S PDF File

2SK3676-01S
2SK3676-01S

Overview
isc N-Channel MOSFET Transistor 2SK3676-01S FEATURES ·Drain Current : ID= 6.
0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.
5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6.
0 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 195 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
64 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...


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