DatasheetsPDF.com

IS45S32160F

ISSI
Part Number IS45S32160F
Manufacturer ISSI
Description 512Mb SDRAM
Published Aug 6, 2022
Detailed Description IS42R32160F, IS45R32160F IS42S32160F, IS45S32160F 16Mx32, 512Mb SDRAM NOVEMBER 2015 FEATURES • Clock frequency: 166, ...
Datasheet PDF File IS45S32160F PDF File

IS45S32160F
IS45S32160F

Overview
IS42R32160F, IS45R32160F IS42S32160F, IS45S32160F 16Mx32, 512Mb SDRAM NOVEMBER 2015 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.
3V-3.
6V IS42/45S32160F - Vdd/Vddq = 3.
3V IS42/45R32160F - Vdd/Vddq = 2.
5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh • 8K refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Packages: 90-ball TF-BGA, 86-pin TSOP-ll • Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +105oC) device OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
All inputs and outputs signals refer to the rising edge of the clock input.
The 512Mb SDRAM is organized as follows.
PACKAGE INFORMATION IS42/45S32160F IS42/45R32160F 4M x 32 x 4 banks 90-ball TF-BGA 86-pin TSOP-ll KEY TIMING PARAMETERS Parameter Clk Cycle Time CAS Latency = 3 CAS Latency = 2 Clk Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock CAS Latency = 3 CAS Latency = 2 -6 -7 6 7 10 10 167 143 100 100 5.
4 5.
4 6 6 -75E Unit — ns 7.
5 ns — Mhz 133 Mhz — ns 6 ns ADDRESS TABLE Parameter 16M x 32 Configuration 4M x 32 x 4 banks Bank Address BA0, BA1 Pins Autoprecharge A10/AP Pins Row Address 8K(A0 – A12) Column 512(A0 – A8) Address Refresh Count Com.
/Ind.
/A1 8K / 64ms A2 8K / 16ms Copyright © 2015 Integrated Silicon Solution, Inc.
All rights reserved.
ISSI reserves the right to make changes to this specification and its products at any time without notice.
ISSI assumes no liability ar...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)