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FDP038AN06A0

ON Semiconductor
Part Number FDP038AN06A0
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Aug 7, 2022
Detailed Description FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 6...
Datasheet PDF File FDP038AN06A0 PDF File

FDP038AN06A0
FDP038AN06A0


Overview
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.
8 mΩ Features Applications • RDS(on) = 3.
5 mΩ ( Typ.
) @ VGS = 10 V, ID = 80 A • QG(tot) = 96 nC ( Typ.
) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82584 • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies D GDS TO-220 GDS I2-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 151oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 2) G S FDP038AN06A0 FDI038AN06A0 60 ±20 80 17 Figure 4 625 310 2.
07 -55 to 175 Unit V V A A A mJ W W/oC oC 0.
48 62 oC/W oC/W ©2002 Semiconductor Components Industries, LLC.
September-2017,Rev.
3 Publication Order Number: FDP038AN06A0/D FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP038AN06A0 FDI038AN06A0 Device FDP038AN06A0 FDI038AN06A0 Package TO-220 I2-PAK Reel Size Tube Tube Tape Width N/A N/A Quantity 50 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250µA ID...


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