DatasheetsPDF.com

IXFH6N120P

Inchange Semiconductor
Part Number IXFH6N120P
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 7, 2022
Detailed Description isc N-Channel MOSFET Transistor IXFH6N120P FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 12...
Datasheet PDF File IXFH6N120P PDF File

IXFH6N120P
IXFH6N120P

Overview
isc N-Channel MOSFET Transistor IXFH6N120P FEATURES ·Drain Current : ID= 6.
0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.
75Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6.
0 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 250 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
5 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwis...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)