DatasheetsPDF.com

IXTH1N300P3HV

IXYS
Part Number IXTH1N300P3HV
Manufacturer IXYS
Description High Voltage Power MOSFET
Published Aug 7, 2022
Detailed Description High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V =...
Datasheet PDF File IXTH1N300P3HV PDF File

IXTH1N300P3HV
IXTH1N300P3HV

Overview
High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.
00A  50 N-Channel Enhancement Mode TO-268HV (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247HV Maximum Ratings 3000 V 3000 V 20 V 30 V 1.
00 A 0.
65 A 2.
60 A 195 W - 55 .
.
.
+150 C 150 C - 55 .
.
.
+150 C 300 °C 260 °C 1.
13/10 Nm/lb.
in 4.
0 g 6.
0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.
8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.
5A, Note 1 TJ = 125C Characteristic Values Min.
Typ.
Max.
3000 V 2.
0 4.
0 V 100 nA 25 A 250  A 50  G S D (Tab) TO-247HV (IXTH) G S D D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  High Blocking Voltage  High Voltage Packages Advantages  Easy to Mount  Space Savings  High Power Density Applications  High Voltage Power Supplies  Capacitor Discharge Applications  Pulse Circuits  Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100590A(6/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.
5A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 500V, ID = 0.
5 • ID25 RG = 20 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 1kV, ID = 0.
5 • ID25 RthJC RthCS TO-247HV Characteristic Values Min.
Typ.
Max.
0.
4 0.
7 S 895 pF 48 pF 17 pF 22 ns 35 ns 78 ns 60 ns 30.
6 nC 4.
0 nC 15.
7 nC 0.
64 C/W 0.
21 C/W IXTT1N300P3HV IXTH1N300P3HV TO...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)