DatasheetsPDF.com

SW18N65D

Samwin
Part Number SW18N65D
Manufacturer Samwin
Description N-channel MOSFET
Published Aug 7, 2022
Detailed Description SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247  High ruggedness  Low RDS(ON) (Typ...
Datasheet PDF File SW18N65D PDF File

SW18N65D
SW18N65D

Overview
SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247  High ruggedness  Low RDS(ON) (Typ 0.
35Ω)@VGS=10V  Low Gate Charge (Typ 79nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED , Charger, PC Power 1 2 3 1 2 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 650V ID : 18A RDS(ON) : 0.
35Ω 2 1 3 Order Codes Item Sales Type 1 SW F 18N65D 2 SW T 18N65D Absolute maximum ratings Marking SW18N65D SW18N65D Package TO-220F TO-247 Packaging TUBE TUBE Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature Maximum lead temperature for soldering TL purpose, 1/8 from case for 5 seconds.
*.
Drain current is limited by junction temperature.
Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Value TO-220F TO-247 650 18* 11* 72 ±30 680 64 5 40 255 0.
32 2.
04 -55 ~ + 150 300 Value TO-220F TO-247 3.
1 0.
49 48 35 Unit V A A A V mJ mJ V/ns W W/oC oC oC Unit oC/W oC/W Copyright@ SEMIPOWER Electronic Technology Co.
, Ltd.
All rights reserved.
Apr.
2019.
Rev.
4.
0 1/6 SW18N65D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Off characteristics BVDSS Drain to source breakdown voltage ΔBVDSS Breakdown voltage temperature / ΔTJ ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)