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SW160R02VT

Samwin
Part Number SW160R02VT
Manufacturer Samwin
Description N-channel MOSFET
Published Aug 7, 2022
Detailed Description SW160R02VT Features N-channel Enhanced mode DFN3*3 MOSFET  High ruggedness  Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ ...
Datasheet PDF File SW160R02VT PDF File

SW160R02VT
SW160R02VT

Overview
SW160R02VT Features N-channel Enhanced mode DFN3*3 MOSFET  High ruggedness  Low RDS(ON) (Typ 12.
3mΩ)@VGS=2.
5V (Typ 9.
4mΩ)@VGS=4.
5V  Low Gate Charge (Typ 15.
4nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:DC-DC Converter, Inverter, Synchronous Rectification DFN3*3 1 8 2 7 3 6 4 5 BVDSS : 20V ID : 16A RDS(ON) : 12.
3mΩ@VGS=2.
5V 9.
4mΩ@VGS=4.
5V D DFN3*3: 4.
Gate 5,6,7,8.
Drain 1,2,3.
Source G General Description S This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche ...


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