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2SK3779-01R

Inchange Semiconductor
Part Number 2SK3779-01R
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Sep 1, 2022
Detailed Description isc N-Channel MOSFET Transistor 2SK3779-01R FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 25...
Datasheet PDF File 2SK3779-01R PDF File

2SK3779-01R
2SK3779-01R

Overview
isc N-Channel MOSFET Transistor 2SK3779-01R FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 53mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A IDM Drain Current-Single Pluse 236 A PD Total Dissipation @TC=25℃ 210 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tst...


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