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2SK3804-01S

Fuji Electric
Part Number 2SK3804-01S
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Sep 1, 2022
Detailed Description 2SK3804-01S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET ■Features High speed switching Low o...
Datasheet PDF File 2SK3804-01S PDF File

2SK3804-01S
2SK3804-01S

Overview
2SK3804-01S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET ■Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof ■Outline Drawings [mm] ■Equivalent circuit schematic Drain (D) ■Applications Switching regulators DC-DC converters General purpose power amplifier Gate (G) Source (S) ■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 133 Maximum Power Dissipation PD 135 Tch Operating and Storage Temperature range Tstg 150 -55 to +150 Note*1 : Tch≦150℃,See Fig.
1 and Fig.
2 Note*2 : Starting Tch=25℃,L=25μH,VCC=48V,RG=50Ω,See Fig.
1 and Fig.
2 EAS limited by maximum channel temperature and avalanche current.
See to Avalanche Energy graph of page 4 ■Electrical Characteristics at Tc=25℃(unless otherwise specified) Static Ratings V V VGS=-20V A A V A Note*1 mJ Note*2 W ℃ ℃ Description Symbol Conditions Min.
Typ.
Max.
Unit Drain-Source Breakdown Voltage BVDSS BVDSX Gate Threshold Voltage VGS(th) ID=1mA VGS=0V ID=1mA VGS=-20V ID=10mA VDS= VGS 75 － － V 40 － － V 2.
5 3.
0 3.
5 V Zero Gate Voltage Drain current IDSS VDS= 75V VGS=0V Tch=25℃ － 1 100 μA Tch=125℃ － 10 500 Gate-Source Leakage current IGSS Drain-Source On-State Resistance RDS(on) VGS= ±20V VDS= 0V ID=35A VGS=10V － 10 100 nA － 6.
4 8.
5 mΩ http://www.
fujielectric.
co.
jp/products/semiconductor/index.
html 1 Jul.
2013 FUJI POWER MOSFET Dynamic Ratings Description Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Reverse Ratings Description Avalanche Capability Diod...


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