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BUTW92 Datasheet PDF


Part Number BUTW92
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High current ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ...
Features -Emitter Breakdown Voltage IC= 5mA; VEB =0 500 V VEBO Emitter-Base Breakdown Voltage IE= 1mA 7 VCE(sat) Collector-Emitter Saturation Voltage IC= 60A; IB= 15A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 60A; IB= 15A VCE=...

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BUT11 : BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature .

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BUT11 : ·With TO-220C package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT11 BUT11A Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT11 BUT11A BUT11 BUT11A CONDITIONS Open emitter VALUE 850 1000 400 450 7 5 10 2 Tmb425 100 0.8 150 -65~150 UNIT V VCEO VEBO IC ICM IB Ptot Tf Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Fall time Junction temperature Storage temperature Open base Open collector V V A A A W µs .

BUT11A : dThe BUT11A is a silicon Multiepitaxial Mesa NPN rotransistor in Jedec TO-220 plastic package, Pparticularly intended for switching application. 3 2 1 TO-220 bsoleteINTERNAL SCHEMATIC DIAGRAM solete Product(s) - OABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0 V) 1000 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 9V IC Collector Current 5A ICM Collector Peak Current (tp 5 ms) 10 A IB Base Current 2A IBM Base Peak Current (tp 5 ms) Ptot Total Power Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 4 83 -65 to 150 150 A W oC oC March 2004 1/5 .

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BUT11A : SEMICONDUCTOR BUT11A Series RRooHHSS Nell High Power Products High Voltage Fast-switching NPN Power Transistor 5A/450V FEATURES High voltage capability Fast switching speed TO-220AB package which can be installed to the heat sink with one screw APPLICATIONS Flyback and forward single transistor low power converters Inverters Converters Switching regulators Motor control systems C B CE TO-220AB (BUT11A) C (2) B (1) NPN E(3) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VCES Collector to emitter voltage VBE=0 VCEO Collector to emitter voltage IB=0 VEBO Emitter to base voltage IC=0 IC Collector current-continuous ICM Peak .

BUT11A : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth  BUT11A   !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • High voltage, high speed NPN power transistors. • With TO-220 package Power Transistors • Intended for use in converters, inverters, switching regulators, motor control systems. • Mounting Torgue: 5 in-lbs Maximum Maximum Ratings Symbol Rating Rating Unit F TO-.

BUT11AF : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUT11AF/D Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. • • • • • • • 1000 Volt VCES Rating Low Base Drive Requirements Isolated Overmold Package Improved System Efficiency No Isolating Washers Required Reduced System Cost High Isolation Voltage Capability (4500 VRMS) BUT11AF POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS.

BUT11AF : High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 2.5 800 MAX. 1000 450 5 10 20 1.5 UNIT V V A A W V A ns Ths ≤ 25 ˚C [INCLUDE] LIMITING VALUES Limiting values in accordance with the Absolute Maximu.

BUT11AF : SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 2.5A; IB = 0.5A f = 16KHz IC=2.5A,IB1=-IB2=0.5A,VCC=150V 1.0 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tst.

BUT11AF : ·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT11F BUT11AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT11F BUT11AF BUT11F BUT11AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 5 10 2 4 TC=25 40 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Open base Ope.




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