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PSMN5R6-100BS

Inchange Semiconductor
Part Number PSMN5R6-100BS
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Sep 14, 2022
Detailed Description isc N-Channel MOSFET Transistor PSMN5R6-100BS FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS=...
Datasheet PDF File PSMN5R6-100BS PDF File

PSMN5R6-100BS
PSMN5R6-100BS

Overview
isc N-Channel MOSFET Transistor PSMN5R6-100BS FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.
6mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 95 A IDM Drain Current-Single Pluse 539 A PD Total Dissipation @TC=25℃ 306 W TJ Max.
Operating Junction Temperature -55~150 ℃ ...


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