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MJD44E3

Part Number	MJD44E3
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 14, 2022
Detailed Description	isc Silicon NPN Darlington Power Transistor MJD44E3 DESCRIPTION ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low C...
Datasheet	MJD44E3 PDF File

Overview

isc Silicon NPN Darlington Power Transistor MJD44E3 DESCRIPTION ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.
5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 10 A 20 W 1.
75 150 ℃ Tstg Storage Temperature Range -5...

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