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AFGHL75T65SQDT

Part Number	AFGHL75T65SQDT
Manufacturer	ON Semiconductor
Description	IGBT
Published	Oct 2, 2022
Detailed Description	Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the St...
Datasheet	AFGHL75T65SQDT PDF File

Overview

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well.
Features • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
6 V (Typ.
) @ IC = 75 A • 100% of the Parts are Tested for ILM (Note 2) • Fast Switching • Tight Parameter Distribution • RoHS Compliant Typica...

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