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NGTB25N120SWG

Part Number	NGTB25N120SWG
Manufacturer	ON Semiconductor
Description	IGBT
Published	Oct 2, 2022
Detailed Description	NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effectiv...
Datasheet	NGTB25N120SWG PDF File

Overview

NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for welding applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 10 ms Short Circuit Capability • These are Pb−Free Devices Typical Applications • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 50 25 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 100 A IF A 50 25 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Transient gate...

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NGTB25N120SWG IGBT - ON Semiconductor

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