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FGHL50T65MQDTL4

ON Semiconductor
Part Number FGHL50T65MQDTL4
Manufacturer ON Semiconductor
Description IGBT
Published Oct 2, 2022
Detailed Description Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQDTL4 Field stop 4th generation mid speed IGBT technology copacked with fu...
Datasheet PDF File FGHL50T65MQDTL4 PDF File

FGHL50T65MQDTL4
FGHL50T65MQDTL4

Overview
Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQDTL4 Field stop 4th generation mid speed IGBT technology copacked with full rated current diode.
Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
45 V (Typ.
) @ IC = 50 A • 100% of the Parts are Tested for ILM (Note 2) • Smooth and Optimized Switching • Tight Parameter Distribution • RoHS Compliant Typical Applications • Solar Inverter • UPS, ESS • PFC, Converters MAXIMUM RATINGS Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C IC 80 A 50 Pulsed Collector Current (Note 2) ILM 200 A Pulsed Collector Current (Note 3) ICM 200 A Diode Forward Current (Note 1) @ TC = 25°C IF 60 A @ TC = 100°C 50 Pulsed Diode Maximum Forward Current IFM 200 ...


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