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FGD2040G3-F085

ON Semiconductor
Part Number FGD2040G3-F085
Manufacturer ON Semiconductor
Description IGBT
Published Oct 2, 2022
Detailed Description EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features • SCIS Energy =...
Datasheet PDF File FGD2040G3-F085 PDF File

FGD2040G3-F085
FGD2040G3-F085

Overview
EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features • SCIS Energy = 200 mJ at TJ = 25°C • Low Saturation Voltage • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG Collector−to−Emitter Breakdown Voltage (IC = 1 mA) Emitter−to−Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 11.
5 A, L = 3.
0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ISCIS = 9.
1 A, L = 3.
0 mHy, RGE = 1 KW, TC = 150°C (Note 2) Collector Current Continuous at VGE = 5.
0 V, TC = 25°C Collector Current Continuous at VGE = 5.
0 V, TC = 110°C Gate−to−Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature Range 400 V 28 V 200 mJ 125 mJ 23.
6 A 13.
6 A ±10 125 0.
83 −55 to 175 V W W/°C °C TL Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 300 °C TPKG Reflow soldering according to JESD020C 260 °C ESD HBM − Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM − Electrostatic Discharge Voltage 2 kV at 1 W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Self Clamped inductive Switching Energy (ESCIS25) of 200 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 11.
5 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2.
Self Clamped inductive Switching Energy (ESCIS150) of 125 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 9.
1 A, VCC = 100 V during inductor charging and VCC = 0 ...


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