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NGTB15N120FL2WG

ON Semiconductor
Part Number NGTB15N120FL2WG
Manufacturer ON Semiconductor
Description IGBT
Published Oct 2, 2022
Detailed Description IGBT - Field Stop II NGTB15N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
Datasheet PDF File NGTB15N120FL2WG PDF File

NGTB15N120FL2WG
NGTB15N120FL2WG

Overview
IGBT - Field Stop II NGTB15N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 10 ms Short Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC A 30 15 Pulsed Collector Current, Tpulse Limited by TJmax ICM 60 A Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 30 15 Diode Pulsed Current, Tpulse Limited IFM by TJmax 60 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.
10) VGE ±20 V ±30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 294 147 Short Circuit Withstand Time TSC VGE = 15 V, VCE = 500 V, TJ ≤ 150°C 10 ms Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
onsemi.
com 15 A, 1200 V VCEsat = 2.
0 V Eoff = 0.
37 mJ C G E G CE TO−247 CASE 340AM MARKING DIAGRAM 15N120FL2 AYWWG 15N120FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATIO...


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