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FGH75T65SHDTLN4

ON Semiconductor
Part Number FGH75T65SHDTLN4
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT t...
Datasheet PDF File FGH75T65SHDTLN4 PDF File

FGH75T65SHDTLN4
FGH75T65SHDTLN4

Overview
IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 offers the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction loss and switching loss are essential.
Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
6 V (Typ.
) @ IC = 75 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tight Parameter Distribution • Pb Free and RoHS Compliant • Not Recommended for Reflow and Full PKG Dipping Typical Applications • Solar Inverter • UPS • Welder • Telecom • ESS • PFC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current TC = 25°C IC 150 A TC = 100°C 75 Pulsed Collector Current (Note 1) ILM 300 A Pulsed Collector Maximum Current (Note 2) ICM 300 A Diode Forward Current TC = 25°C IF 125 A TC = 100°C 75 Pulsed Diode Maximum Forward Current (Note 2) IFM 300 A Maximum Power Dissipation TC = 25°C PD 455 W TC = 100°C 227 Operating Junction and Storage Temperature Range TJ, TSTG − 55 to °C +175 Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 5 seconds) TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 73 W, Inductive Load 2.
Repetitive rating: pulse width limited by max.
Junction temperature This document contains information on a product under development.
ON Semiconductor reserves the right to change or discontinue this product without notice...


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