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FGH30S130P

ON Semiconductor
Part Number FGH30S130P
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description IGBT - Shorted-Anode 1300 V, 30 A FGH30S130P Description Using advanced field stop trench and shorted−anode technology, ...
Datasheet PDF File FGH30S130P PDF File

FGH30S130P
FGH30S130P

Overview
IGBT - Shorted-Anode 1300 V, 30 A FGH30S130P Description Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switching performances for soft switching applications.
The device can operate in parallel configuration with exceptional avalanche capability.
This device is designed for induction heating and microwave oven.
Features • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.
75 V @ IC = 30 A • High Input Impedance • This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, Microwave Oven www.
onsemi.
com C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH30S 130P $Y &Z &3 &K FGH30S130P = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
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