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FGH40T65SHDF

ON Semiconductor
Part Number FGH40T65SHDF
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor’...
Datasheet PDF File FGH40T65SHDF PDF File

FGH40T65SHDF
FGH40T65SHDF

Overview
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation.
This device is well suited for the resonant or soft switching application such as induction heating and MWO.
Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.
45 V(Typ.
) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, MWO www.
onsemi.
com C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH40T65 SHDF $Y &Z &3 &K FGH40T65SHDF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014 1 November, 2020 − Rev.
4 Publication Order Number: FGH40T65SHDF/D FGH40T65SHDF ABSOLUTE MAXIMUM RATINGS Description Symbol FGH40T65SHDF−F155 Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 V Collector Current TC = 25°C IC 80 A Collector Current TC = 100°C 40 A Pulsed Collector Current (Note 1) TC = 25°C ILM 120 A Pulsed Collector Current (Note 2) ICM 120 A Diode Forward Current TC = 25°C IF 40 A Diode Forward Current TC = 100°C 20 A Pulsed Diode Maximum Forward Current IFM 60 A Maximum Power Dissipation TC = 25°C PD 268 W Maximum Power Dissipation TC = 100°C 134 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead T...


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