DatasheetsPDF.com

MGP19N35CL

ON Semiconductor
Part Number MGP19N35CL
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level I...
Datasheet PDF File MGP19N35CL PDF File

MGP19N35CL
MGP19N35CL

Overview
MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
• Ideal for IGBT−On−Coil or Distributorless Ignition System Applications • High Pulsed Current Capability up to 50 A • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)