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MGB19N35CL

ON Semiconductor
Part Number MGB19N35CL
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level I...
Datasheet PDF File MGB19N35CL PDF File

MGB19N35CL
MGB19N35CL

Overview
MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
• Ideal for IGBT−On−Coil or Distributorless Ignition System Applications • High Pulsed Current Capability up to 50 A • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • Optional Gate Resistor (RG) MAXIMUM RATINGS (−55°C ≤ TJ ≤ 175°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current − Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF VCES VCER VGE IC ESD 380 VDC 380 VDC 22 VDC 19 ADC 50 AAC kV 8.
0 ESD (Machine Model) R = 0 Ω, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C ESD PD 800 V 165 Watts 1.
1 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to °C 175 UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55°C ≤ TJ ≤ 175°C) Characteristic Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche EAS mJ Energy VCC = 50 V, VGE = 5.
0 V, Pk IL = 22.
4 A, 500 L = 2.
0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.
0 V, Pk IL = 17.
4 A, 300 L = 2.
0 mH, Starting TJ = 150°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, L = 3.
0 mH, Pk IL = 25.
8 A, Starting TJ = 25_C EAS(R) mJ 1000 © Semiconductor Components Industries, LLC, 2005 1 February, 2005 − Rev.
XXX http://onsemi.
com 19 AMPERES 350 VOLTS (Clamped) VCE(on) @ 10 A = 1.
8 V Max N−Channel C G RGE 4 E 4 12 3 1 2 3 TO−...


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