AFGB30T65RQDN Datasheet PDF

Part Number AFGB30T65RQDN
Manufacturer ON Semiconductor
Title IGBT
Description IGBT for Automotive Applications 650 V, 30 A AFGB30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the opti...
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ.) @ IC = 30 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Tightened Parameter...

File Size 241.09KB
Datasheet AFGB30T65RQDN PDF File

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