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FGY60T120SQDN

ON Semiconductor
Part Number FGY60T120SQDN
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description Ultra Field Stop IGBT, 1200 V, 60 A FGY60T120SQDN General Description This Insulated Gate Bipolar Transistor (IGBT) fe...
Datasheet PDF File FGY60T120SQDN PDF File

FGY60T120SQDN
FGY60T120SQDN

Overview
Ultra Field Stop IGBT, 1200 V, 60 A FGY60T120SQDN General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature TJ = 175°C • Low Saturation Voltage: VCE(sat) = 1.
7 V (Typ.
) @ IC = 60 A • 100% of the Parts Tested for ILM (Not...


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