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FGY75T95SQDT

ON Semiconductor
Part Number FGY75T95SQDT
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co−...
Datasheet PDF File FGY75T95SQDT PDF File

FGY75T95SQDT
FGY75T95SQDT

Overview
IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co−packaged with full current rated diode.
Features • Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
69 V (Typ.
) @ IC = 75 A • Fast Switching • Tighten Parameter Distribution • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter • PFC • DC/DC Converter MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage VCES 950 V Gate to Emitter Voltage Transient Gate to Emitter Voltage VGES ±20 V ±30 Collector...


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