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AFGY100T65SPD

ON Semiconductor
Part Number AFGY100T65SPD
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualifi...
Datasheet PDF File AFGY100T65SPD PDF File

AFGY100T65SPD
AFGY100T65SPD

Overview
Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI.
Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing.
Features • AEC−Q101 Qualified • Very Low Saturation Voltage: VCE(Sat) = 1.
6 V (Typ.
) @ IC = 100 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Tested for ILM • Short Circuit Ruggedness • Co−packed with Soft Fast Recovery Diode Typical Applications • Traction Inverter for HEV/EV • Auxiliary DC/AC Converters • Motor Drives • Other Power−Train Applications Requiring High Power Switch MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C IC 120 @ TC = 100°C 100 Pulsed Collector Current ILM 300 Pulsed Collector Current ICM 300 Diode Forward Current (Note 1) @ TC = 25°C IF 120 @ TC = 100°C 100 Maximum Power Dissipation @ TC = 25°C PD 660 @ TC = 100°C 330 Short Circuit Withstand Time @ TC = 25°C SCWT 6 Voltage Transient Ruggedness (Note 2) dV/dt 10 Operating Junction / Storage Temperature Range TJ, TSTG −55 to +175 Maximum Lead Temp.
for Soldering Purposes, 1/8″ from case for 5 seconds TL 265 A A A A W ms V/ns °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Value limit by bond wire 2.
VCC = 400 V, VGE = 15 V, IC = 300 A, Inductive Load www.
onsemi.
com 100 A, 650 V, VCESat = 1.
6 V C G E G CE TO−247...


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