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FGY120T65SPD-F085

ON Semiconductor
Part Number FGY120T65SPD-F085
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A FGY120T65SPD-F085 Features • Very Low Saturation Volta...
Datasheet PDF File FGY120T65SPD-F085 PDF File

FGY120T65SPD-F085
FGY120T65SPD-F085


Overview
Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A FGY120T65SPD-F085 Features • Very Low Saturation Voltage : VCE(sat) = 1.
5 V(Typ.
) @ IC = 120 A • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Dynamically Tested • Short Circuit Ruggedness > 6 ms @ 25°C • Copacked with Soft, Fast Recovery Extremefast Diode • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Curre...



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