DatasheetsPDF.com

HGTG10N120BND

ON Semiconductor
Part Number HGTG10N120BND
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Oct 3, 2022
Detailed Description NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND The HGTG10N120BND is a Non−Punch...
Datasheet PDF File HGTG10N120BND PDF File

HGTG10N120BND
HGTG10N120BND

Overview
NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND The HGTG10N120BND is a Non−Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49290.
The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driver...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)