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AFGY120T65SPD-B4

ON Semiconductor
Part Number AFGY120T65SPD-B4
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A AFGY120T65SPD-B4 Features • AE...
Datasheet PDF File AFGY120T65SPD-B4 PDF File

AFGY120T65SPD-B4
AFGY120T65SPD-B4

Overview
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A AFGY120T65SPD-B4 Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.
5 V (Typ.
) @ IC = 120 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−Efficient • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Dynamically Tested • Short Circuit Ruggedness > 6 ms @ 25°C • Copacked with Soft, Fast Recovery Extremefast Diode • This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliabili...


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