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NZ8DH6V8

ON Semiconductor
Part Number NZ8DH6V8
Manufacturer ON Semiconductor
Description Zener Protection Diode
Published Oct 5, 2022
Detailed Description DATA SHEET www.onsemi.com Zener Protection Diode NZ8DH Series The NZ8DH devices are designed for applications requiring...
Datasheet PDF File NZ8DH6V8 PDF File

NZ8DH6V8
NZ8DH6V8

Overview
DATA SHEET www.
onsemi.
com Zener Protection Diode NZ8DH Series The NZ8DH devices are designed for applications requiring transient overvoltage ESD protection.
They are intended to protect voltage sensitive components from ESD and other harmful transient voltage events.
This device provides a single channel of bidirectional protection in an, ultra−compact XDFNW2 1.
0 x 0.
6 mm package.
This device is ideal to replace SOT23 or other dual diode 3 pin devices used as single line bi−directional protection.
Features • Precise Clamping Voltage • High ESD Ratings • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • 175°C TJ(MAX) – Rated for High Temperature, Mission Critical Applications • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Automotive ECU’s • In Vehicle Networking (IVN) • Voltage Sensitive Circuits XDFNW2 CASE 521AE DEVICE MARKING INFORMATION XX M XX = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† NZ8DHxxxxMXWT5G XDFNW2 8000 / Tape SZNZ8DHxxxxMXWT5G (Pb−Free) & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000-4-2 Contact (Note 1) ESD ±30 kV IEC 61000-4-2 Air ±30 kV ISO 10605 Contact (330 pF / 330 W) ≤ 9.
1 V > 9.
1 V ±30 kV ±26 ISO 10605 Contact (330 pF / 2 kW) ±30 kV ISO 10605 Contact (150 pF / 2 kW) ±30 kV Maximum Peak Pulse Current (8/20 ms) (Note 2) Ipp 4.
5 A Total Power Dissipation (Note 3 @ TA = 25°C Thermal Resistance, Junction-to-Ambient PD RqJA 300 mW 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If a...


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