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SKM350MB120SCH17

Semikron
Part Number SKM350MB120SCH17
Manufacturer Semikron
Description SiC MOSFET
Published Oct 8, 2022
Detailed Description SKM350MB120SCH17 SEMITRANS® 3 SiC MOSFET Module SKM350MB120SCH17 Features* • Full Silicon Carbide (SiC) power module • ...
Datasheet PDF File SKM350MB120SCH17 PDF File

SKM350MB120SCH17
SKM350MB120SCH17


Overview
SKM350MB120SCH17 SEMITRANS® 3 SiC MOSFET Module SKM350MB120SCH17 Features* • Full Silicon Carbide (SiC) power module • High reliability 2nd Generation SiC MOSFETs • Optimized for fast switching and lowest power losses • High humidity robustness (HV-H3TRB proof) • External SiC Schottky Barrier Diode embedded • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Improved thermal performances with Aluminium Nitride (AlN) substrate • UL recognized, file no.
E63532 Typical Applications • High frequency power supplies • AC inverters • Traction APU • EV Chargers • Industrial Test Systems Remarks • Case temperature limited to TC = 125°C max.
• Recommended Tjop = -40 .
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+150°C • Gate-Source SURGE VOLTAGE (tsurge<300ns), VGS_surge = -10V .
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+26V Absolute Maximum Ratings Symbol Conditions MOSFET VDSS ID Tj = 175 °C IDM IDRM VGS Tj Integrated body diode IFM IFRM Tc = 25 °C Tc = 80 °C Absolute Maximum Ratings Symbol Conditions Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM tp = 8.
3 ms, sin 180°, Tj = 25 °C Tj Absolute Maximum Ratings Symbol Conditions Module It(RMS) Tstg Visol module without TIM AC sinus 50 Hz, t = 1 min Values 1200 478 380 1280 904 -6 .
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22 -40 .
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175 1280 904 Values 1200 187 143 100 300 373 -40 .
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175 Values 500 -40 .
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125 4000 Unit V A A A A V °C A A Unit V A A A A A °C Unit A °C V MB © by SEMIKRON Rev.
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0 – 14.
08.
2020 1 SKM350MB120SCH17 SEMITRANS® 3 SiC MOSFET Module SKM350MB120SCH17 Features* • Full Silicon Carbide (SiC) power module • High reliability 2nd Generation SiC MOSFETs • Optimized for fast switching and lowest power losses • High humidity robustness (HV-H3TRB proof) • External SiC Schottky Barrier Diode embedded • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Improved thermal performances with Aluminium Nitride (AlN) substrate • UL recognized, file no.
E63532 Typical Applications • High frequency power supplies • AC inverters • Tr...



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