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MSC015SMA070B

Microsemi
Part Number MSC015SMA070B
Manufacturer Microsemi
Description Silicon Carbide N-Channel Power MOSFET
Published Oct 8, 2022
Detailed Description MSC015SMA070B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product lin...
Datasheet PDF File MSC015SMA070B PDF File

MSC015SMA070B
MSC015SMA070B

Overview
MSC015SMA070B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The MSC015SMA070B device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 package.
Features The following are key features of the MSC015SMA070B device: • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness • RoHS compliant Benefits The following are benefits of the MSC015SMA070B device: • High efficiency to enable lighter, more compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need for external freewheeling diode • Lower system cost of ownership Applications The MSC015SMA070B device is designed for the following applications: • PV inverter, converter, and industrial motor drives • Smart grid transmission and distribution • Induction heating and welding • H/EV powertrain and EV charger • Power supply and distribution 050-7746 MSC015SMA070B Datasheet Revision C 1 Device Specifications Device Specifications This section shows the specifications of the MSC015SMA070B device.
Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC015SMA070B device.
Table 1 • Absolute Maximum Ratings Symbol Characteristic Ratings Unit VDSS Drain source voltage ID Continuous drain current at TC = 25 °C Continuous drain current at TC = 100 °C IDM Pulsed drain current1 VGS Gate-source voltage PD Total power dissipation at TC = 25 °C Linear derating factor 700 140 99 350 23 to –10 455 3.
03 V A V W W/°C Note: 1.
Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
The f...


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