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G3R60MT07J

GeneSiC
Part Number G3R60MT07J
Manufacturer GeneSiC
Description SiC MOSFET
Published Oct 8, 2022
Detailed Description G3R60MT07J 750 V 60 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 ...
Datasheet PDF File G3R60MT07J PDF File

G3R60MT07J
G3R60MT07J

Overview
G3R60MT07J 750 V 60 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • 100% Avalanche (UIL) Tested Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Superior Robustness and System Reliability TM VDS = RDS(ON)(Typ.
) = ID(TC = 100°C) = 750 V 60 mΩ 31 A Package D TO-263-7 G KS S D = Drain G = Gate S = Source KS = Kelvin Source Applications • Solar (PV) Inverters • Server & Telecom Power Supplies • Uninterruptible Power Supplies (UPS) • EV / HEV Charging • DC-DC Converters • Switched Mode Power Supplies (SMPS) • Energy Storage and Battery Charging • Class D Amplifiers RoHS REACH Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Drain-Source Voltage Gate-Source Voltage (Dynamic) Gate-Source Voltage (Static) Continuous Forward Current Pulsed Drain Current Power Dissipation Non-Repetitive Avalanche Energy Operating and Storage Temperature Symbol VDS(max) VGS(max) VGS(op) ID ID(pulse) PD EAS Tj , Tstg Conditions VGS = 0 V, ID = 100 µA Recommended Operation TC = 25°C, VGS = -5 / +15 V TC = 100°C, VGS = -5 / +15 V TC = 135°C, VGS = -5 / +15 V tP ≤ 3µs, D ≤ 1%, VGS = 15 V, Note 1 Tc = 25°C L = 7.
5 mH, IAS = 7.
5 A Values 750 -10 / +20 -5 / +15 44 31 23 100 182 210 -55 to 175 Unit Note V V V A Fig.
15 A Fig.
14 W Fig.
16 mJ °C Thermal/Package Characteristics Parameter Thermal Resistance, Junction - Case Weight Symbol R thJC WT Note 1: Pulse Width tP Limited by Tj(max) Conditions Va...


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