DatasheetsPDF.com

IXZR16N60B

IXYS
Part Number IXZR16N60B
Manufacturer IXYS
Description Z-MOS RF Power MOSFET
Published Oct 8, 2022
Detailed Description IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low...
Datasheet PDF File IXZR16N60B PDF File

IXZR16N60B
IXZR16N60B

Overview
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Operation Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 600 V 600 V RDS(on) ≤ 0.
56 Ω PDC = 350 VGS VGSM Continuous Transient ±20 V ±30 V 60 S DD GS = =G 60A60B = ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 18 A 90 A D IAR EAR Tc = 25°C Tc = 25°C 18 A TBD mJ G S dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 5 >200 V/ns V/ns PDC PDHS PDAMB RthJC RthJHS Tc = 25°C, Derate 4.
4W/°C above 25°C Tc = 25°C 350 W TBD W 3.
0 W TBD C/W TBD C/W Symbol VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min.
typ.
max.
VGS = 0 V, ID = 4 ma 600 V VDS = VGS, ID = 250µΑ 4.
6 V VGS = ±20 VDC, VDS = 0 ±100 nA VDS = 0.
8VDSS VGS=0 TJ = 25C TJ =125C 50 µA 1 mA VGS = 20 V, ID = 0.
5ID25 0.
53 Ω Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 50V, ID = 0.
5ID25, pulse test 6.
4 S -55 +175 °C 175 °C -55 + 175 °C 1.
6mm(0.
063 in) from case for 10 s 300 °C 3.
5 g Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low gate charge and capacitances − easier to drive − faster switching • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials Advantages • High Performance RF Z-MOSTM • Optimized for RF and high speed • Common Source RF Package A = Gate Source Drain B = Drain Source Gate • Isolated Package, no insulator required Symbol Test Conditions IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Characteris...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)