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C2M0045170P

Wolfspeed
Part Number C2M0045170P
Manufacturer Wolfspeed
Description Silicon Carbide Power MOSFET
Published Oct 8, 2022
Detailed Description C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation Si...
Datasheet PDF File C2M0045170P PDF File

C2M0045170P
C2M0045170P

Overview
C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen free, RoHS compliant TO-247-4L Plus Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Package Types: TO-247-4L Plus Power Source (Pin 2) PN’s: C2M0045170P Wolfspeed, Inc.
is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc.
to Wolfspeed, Inc.
During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
Applications • Solar inverters • Switch mode power supplies • High voltage DC/DC converters • Motor drive • Pulsed power applications Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter Symbol Value Unit Test Conditions Note Drain - Source Voltage VDSmax 1700 VGS = 0 V, ID = 100 μA Gate - Source Voltage VGSmax -10/+25 V Absolute Maximum Values, AC (f >1 Hz) Note: 1 Gate - Source Voltage VGSop -5/+20 Recommended Operational Values Note: 2 Continuous Drain Current 75 ID 48 A VGS = 20 V, TC = 25 °C VGS = 20 V, TC = 100 °C Fig.
19 Pulsed Drain Current ID (pulse) 160 Pulse Width tP Limited by Tjmax Fig.
22 Power Dissipation PD 338 W Operating Junction and Storage Temperature TJ, Tstg -40 to +150 °C Solder Temperature TL 260 °C TC = 25 °C, TJ = 150 °C Fig.
20 According to JEDEC J-STD-020 Note (1): When using MOSFET body diode VGSmax = -5 V/+25 V.
Note (2): MOSFET can also safely operate at 0/+20 V.
Rev.
4, November 2023 ...


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