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C3M0120065K

Cree
Part Number C3M0120065K
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Oct 8, 2022
Detailed Description VDS 650 V C3M0120065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 22 A 120 mΩ N-Channel...
Datasheet PDF File C3M0120065K PDF File

C3M0120065K
C3M0120065K

Overview
VDS 650 V C3M0120065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 22 A 120 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • DC/DC converters • Switch Mode Power Supplies • EV battery chargers • UPS Part Number C3M0120065K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO-247-4 Marking C3M0120065K Maximum Ratings Symbol Parameter VDSS VGS ID Drain - Source Voltage, TC = 25 ˚C Gate - Source voltage (Under transient events < 100 ns) Continuous Drain Current, VGS = 15 V, TC = 25˚C Continuous Drain Current, VGS = 15 V, TC = 100˚C ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax PD TJ , Tstg TL Md Power Dissipation, TC=25˚C, TJ = 175 ˚C Operating Junction and Storage Temperature Solder Temperature, 1.
6mm (0.
063”) from case for 10s Mounting Torque, (M3 or 6-32 screw) Value Unit Note 650 -8/+19 22 16 V V Fig.
29 A Fig.
19 51 A 98 -40 to +175 260 1 8.
8 W Fig.
20 ˚C ˚C Nm lbf-in 1 C3M0120065K Rev 1, 01-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min.
Typ.
V(BR)DSS Drain-Source Breakdown Voltage 650 VGSon Gate-Source Recommended Turn-On Voltage 15 VGSoff Gate-Source Recommended Turn-Off Voltage -4 VGS(th) Gate Threshold Voltage 1.
8 2.
3 1.
9 IDSS Zero Gate Voltage Drain Current 1 IGSS Gate-Source Leakage Current 10 120 RDS(on) Drain-Source On-State Resistance 168 5.
0 gfs ...


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