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MMSD103T1G

ON Semiconductor
Part Number MMSD103T1G
Manufacturer ON Semiconductor
Description High Voltage Switching Diode
Published Oct 9, 2022
Detailed Description MMSD103T1G, SMMSD103T1G High Voltage Switching Diode Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Auto...
Datasheet PDF File MMSD103T1G PDF File

MMSD103T1G
MMSD103T1G

Overview
MMSD103T1G, SMMSD103T1G High Voltage Switching Diode Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 V Peak Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 625 mA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board PF (Note 1) @ TA = 25C Derate above 25C 400 mW 3.
2 mW/C Thermal Resistance, Junction−to−Case RqJL C/W 174 Thermal Resistance, Junction−to−Ambient RqJA C/W 492 Junction and Storage Temperature Range TJ, Tstg −55 to +150 C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses ...


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