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CSD13383F4

Part Number	CSD13383F4
Manufacturer	Texas Instruments
Description	12-V N-Channel Power MOSFET
Published	Oct 22, 2022
Detailed Description	CSD13383F4 SLPS517C – DECEMBER 2014 – REVISED FEBRUARY 2022 CSD13383F4 12 V N-Channel FemtoFET™ MOSFET 1 Features • Low...
Datasheet	CSD13383F4 PDF File

Overview

CSD13383F4 SLPS517C – DECEMBER 2014 – REVISED FEBRUARY 2022 CSD13383F4 12 V N-Channel FemtoFET™ MOSFET 1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.
0 mm × 0.
6 mm • Low profile – 0.
36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for load switch applications • Optimized for general purpose Switching Applications • Single-cell battery applications • Handheld and mobile applications 3 Description This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.
This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
.
.
0.
36 mm Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 12 Qg Gate Charge Total (4.
5 V) 2.
0 Qgd Gate Charge Gate-to-Drain 0.
6 RDS(on) Drain-to-Source On-Resistance VGS = 2.
5 V VGS = 4.
5 V 53 37 VGS(th) Threshold Voltage 1.
0 UNIT V nC nC mΩ V DEVICE(1) CSD13383F4 CSD13383F4T .
Ordering Information QTY MEDIA PACKAGE 3000 250 7-Inch Femto (0402) 1.
0 mm × Reel 0.
6 mm SMD Lead Less SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(1) (2) Continuous Gate Clamp Current IG Pulsed Gate Clamp Current(1) (2) VALUE 12 ±10 2.
9 18.
5 25 250 PD Power Dissipation 500 ESD Human Body Model (HBM) 2 Rating Charged Device Model (CDM) 2 TJ, Operating Junction Temperature Tstg Storage Temperature EAS Avalanche Energy, single pulse ID = 6.
7, L = 0.
1 mH, RG = 25 Ω –55 to 150 2.
2 UNIT V V A A mA mW kV kV °C mJ (1) Typical RθJA = 250°C/W.
(2) Pulse duration ≤100 μs, duty cycle ≤1%.
0.
60 mm 1.
00 mm ...

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CSD13383F4 12-V N-Channel Power MOSFET - Texas Instruments

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